The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/Azure C/p-Si junctions devices


Orak I., TÜRÜT A. , Toprak M.

SYNTHETIC METALS, vol.200, pp.66-73, 2015 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 200
  • Publication Date: 2015
  • Doi Number: 10.1016/j.synthmet.2014.12.023
  • Title of Journal : SYNTHETIC METALS
  • Page Numbers: pp.66-73
  • Keywords: Illumination conditions, Azure C, Thickness impact, Thermionic emission theory, STATE ENERGY-DISTRIBUTIONS, SERIES RESISTANCE, C-V, SCHOTTKY, INTERFACE, FILMS, CONDUCTANCE, FREQUENCY

Abstract

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of AI/Azure C/p-Si heterojunction fabricated with spin coating system have been investigated under illumination conditions, coating thickness at room temperature. Some heterojunction parameters such as ideality factor and barrier height were obtained to be 1.10, 1.15, and 1.26, and 0.57 eV, 0.64 eV and 0.65 eV for undoped, doped 2 mu l/cm(2), and 4 mu l/cm(2), respectively from the current-voltage measurement by thermionic emission current equation. It was observed that the ideality factor, barrier height and photovoltaic performance have increased and the device capacitance decreased with increasing organic layer thickness. (C) 2014 Elsevier B.V. All rights reserved.