PHYSICA SCRIPTA, cilt.68, ss.70-73, 2003 (SCI İndekslerine Giren Dergi)
Sn/p-Si Schottky barrier diodes (SBDs) have been fabricated. Current-voltage (I V) and capacitance-voltage (C-V) measurements have been made as a function of hydrostatic pressure. The value of the barrier height and ideality factor n range from 0.706+/-0.01 eV and 1.062+/-0.0095 at 0.0 kbar to 0.735+/-0.01 eV and 1.086+/-0.0095 at 7.0 kbar, respectively. We have seen that Phi(b) for Sn/p-Si SBDs has a pressure coefficient of 5.616+/-0.010 meV/kbar (= 56.16 meV/GPa). We have concluded that the p-type barrier height exhibits a pressure dependence, accepting that the Fermi level at the interface shifts as a function of the pressure in the same direction as the conduction band edge and by the same amount of energy. The series resistance value of the device has decreased with increasing pressure.