Illumination response on the electrical characterizations of Cr/n-GaAs/In photodiode (Retracted article. See vol. 127, pg. 3095, 2016)

Orak I., Korkut H., Yildirim N., Turut A.

OPTIK, vol.126, no.24, pp.4946-4948, 2015 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 126 Issue: 24
  • Publication Date: 2015
  • Doi Number: 10.1016/j.ijleo.2015.09.225
  • Journal Name: OPTIK
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.4946-4948


In this study, we were investigated current-voltage (I-V) measurements of Cr/n type-GaAs photodiode and performed under dark, room light and illumination conditions at room temperature. The ideality factor (n) and barrier height (phi(beta)) values of the device was calculated to be 1.1 and 0.91 eV, respectively. The photovoltaic parameters, such as short circuit current (I-sc) and open circuit voltage (V-oc) were acquired as 280 mV, 0.18 mu A and 460 mV, 13.1 mu A room light and under 30 mW/cm(2) light intensity, respectively. The obtained results recommend that Grin-GaAs diode can be used as a photodevice in optoelectronic and photovoltaic applications. The device under light illumination shows a good photovoltaic behavior. (C) 2015 Elsevier GmbH. All rights reserved.