Illumination response on the electrical characterizations of Cr/n-GaAs/In photodiode (Retracted article. See vol. 127, pg. 3095, 2016)


Orak I., Korkut H., Yildirim N., Turut A.

OPTIK, cilt.126, ss.4946-4948, 2015 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 126 Konu: 24
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.ijleo.2015.09.225
  • Dergi Adı: OPTIK
  • Sayfa Sayısı: ss.4946-4948

Özet

In this study, we were investigated current-voltage (I-V) measurements of Cr/n type-GaAs photodiode and performed under dark, room light and illumination conditions at room temperature. The ideality factor (n) and barrier height (phi(beta)) values of the device was calculated to be 1.1 and 0.91 eV, respectively. The photovoltaic parameters, such as short circuit current (I-sc) and open circuit voltage (V-oc) were acquired as 280 mV, 0.18 mu A and 460 mV, 13.1 mu A room light and under 30 mW/cm(2) light intensity, respectively. The obtained results recommend that Grin-GaAs diode can be used as a photodevice in optoelectronic and photovoltaic applications. The device under light illumination shows a good photovoltaic behavior. (C) 2015 Elsevier GmbH. All rights reserved.