Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

Çakar M., TÜRÜT A., Onganer Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.15, no.1, pp.47-53, 2004 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 15 Issue: 1
  • Publication Date: 2004
  • Doi Number: 10.1023/a:1026297105615
  • Journal Name: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.47-53

Abstract

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate have been studied. The pyronine-B has been sublimed onto the top of p-Si surface. The barrier height and ideality factor values of 0.79 eV and 1.125 for this structure have been obtained from the forward-bias current-voltage characteristics. The density distribution of the interface states in the inorganic semiconductor bandgap and their relaxation time have been determined from the low-capacitance-frequency characteristics by the Schottky capacitance spectroscopy method. The measurement frequency varies from 90 Hz to 10 MHz. The interface state density N-ss ranges from 2.10 x 10(10) cm(-2) eV(-1) in (0.79 - E-v)eV to 1.16 x 10(12) cm(-2) eV(-1) in (0.53 - E-v)eV. Furthermore, the relaxation time ranges from 1.38 x 10(-3)s in (0.53-F-V)eV to 7.50 x 10(-3)s in (0.79-E-V)eV.