SOLID-STATE ELECTRONICS, cilt.35, ss.835-841, 1992 (SCI İndekslerine Giren Dergi)
In this study, we have attempted to interpret experimentally observed non-ideal Al-pSi Schottky diode I-V and C-2-V characteristics which are due to an interface layer, interface states and fixed surface charge. A value of 0.68 eV for the barrier height q-PHI(Bo) for Al-pSi diodes without interface layer and fixed surface charge has been obtained from C-2-V characteristics and a value of 0.20 eV for the neutral level of the surface states has been found. Furthermore, the value of the barrier height q-PHI(Bp) without fixed surface charge and the effective barrier height q-PHI(Bp,o) are separately obtained from C-2-V characteristics. In addition, values of interface state density D(it) have been calculated.