The electrical characteristics of Cr/- and Fe/liquid-encapsulated Czochralski (LEC)n-GaAs Schottky barrier diodes (SBDs) annealed at temperatures from 100 to 300 degrees C for 5 min and from 350 to 800 degrees C for 1 min have been investigated as a function of annealing temperature, with the use of current-voltage (I-V) techniques. For Cr/n-GaAs SBDs, the Schottky barrier height Phi(b) and ideality factor a values range from 0.57 eV and 1.10 (for the as-deposited sample) to 0.80 eV and 1.10 (for 650 degrees C annealing). The ideality factor values remain approximately unchanged up to 650 degrees C and increased to 1.28 at 700 degrees C (Phi(b) = 0.81 eV). For Fe/n-GaAs SBDs, the Phi(b) and n values range from 0.60 eV and 1.06 (for the as-deposited sample) to 0.78 eV and 1.08 (for 400 degrees C annealing). After 400 degrees C annealing, while the a values of the Fe/n-GaAs SBDs remain approximately unchanged between 1.10 and 1.12 up to 650 degrees C annealing, the Phi(b) value decreased with increasing temperature and became 0.75 at 650 degrees C (n = 1.11) and 0.73 at 700 degrees C (n = 1.20). IL has been seen that the Cr/- and Fe/LECn-GaAs contacts are thermally stable under annealing up to 650 degrees C.