Atomic Layer Deposited Ultra Thin HfO2 Interfacial Layer Grown on GaAs-based MIS Structure in 60-400 K Temperature Range

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TÜRÜT A., KARABULUT A., BIYIKLI N.

International Conference On Nanoscience and Nanotechnology For Next Generation-Nanong, Antalya, Turkey, 29 October 2015

• Publication Type: Conference Paper / Full Text
• City: Antalya
• Country: Turkey