Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions


Coşkun F. M. , Polat O., Coşkun M. , Türüt A. , Çağlar M., Durmuş Z., ...Daha Fazla

JOURNAL OF APPLIED PHYSICS, cilt.125, 2019 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 125 Konu: 21
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1063/1.5094129
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS

Özet

Among the multiferroics, yttrium manganite YMnO3 (YMO) is one of the most frequently studied magnetic ferroelectric oxides and has attracted a great deal of concern, thanks to its potential magnetoelectric features. Furthermore, it has been reported in the literature that yttrium manganite is a useful interface material in thin film devices. It has been documented that the dopant into Y and/or Mn site(s) plays significant roles on the electrical and magnetic properties of YMO. The YMn0.95Os0.05O3 (YMOO) oxide powders were prepared by the well-known solid-state reaction technique. The YMOO thin films were deposited on the p-Si (100) substrate via a radio frequency sputtering method with a thickness of approximately 62nm. The oxidation states of the constituted elements have been investigated by using the X-ray photoelectron spectroscopy method. Furthermore, the surface features of the obtained thin film have been investigated using a scanning electron microscope measurement. The I-V measurements were performed in the 50-310K range, and consequently, the Schottky diodelike reverse and forward bias I-V characteristics were observed in the Al/YMOO/p-Si heterojunction. Moreover, the ideality factor and the barrier height values were calculated as 0.77 and 2.23 at room temperature, respectively.