The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/N-Si Schottky barrier diodes


Ayyıldız E., Lu C., TÜRÜT A.

JOURNAL OF ELECTRONIC MATERIALS, vol.31, no.2, pp.119-123, 2002 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 31 Issue: 2
  • Publication Date: 2002
  • Doi Number: 10.1007/s11664-002-0157-9
  • Title of Journal : JOURNAL OF ELECTRONIC MATERIALS
  • Page Numbers: pp.119-123
  • Keywords: Schottky diodes, Au/n-Si, interface states, C-V CHARACTERISTICS, VOLTAGE CHARACTERISTICS, SEMICONDUCTOR CONTACT, METAL-SEMICONDUCTOR, DEPENDENCE, LAYER, EXTRACTION, IV

Abstract

The Au/n-Si Schottky barrier diodes (SBDs) with 200-mum (sample D200) and 400-mum (sample D400) bulk thicknesses have been fabricated. The ideality factor and the barrier height have been calculated from the forward-bias current-voltage (I-V) characteristics of D200 and D400 SBDs. The energy distribution of the interface states and relaxation time are found from the capacitance-frequency (C-f) characteristics. The density of interface state and relaxation times have a (nearly constant) slow exponential rise with bias in the range of E-c -0.77 and E-c -0.47 eV from the midgap toward the bottom of the conductance band. Furthermore, the energy distribution of the interface states obtained from C-f characteristics has been compared with that obtained from the forward-bias I-V characteristics.