On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts


Yıldırım ., Ejderha K., TÜRÜT A.

JOURNAL OF APPLIED PHYSICS, cilt.108, 2010 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 108 Konu: 11
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1063/1.3517810
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS

Özet

We report the current-voltage (I-V) and capacitance-voltage characteristics (C-V) of Ni/n-GaN Schottky diodes. Gallium nitride is a highly promising wide band gap semiconductor for applications in high power electronic and optoelectronic devices which require Schottky barriers for modulating the channel mobile charge. The I-V and C-V characteristics of the diodes have been measured in the temperature range of 80-400 K with steps of 20 K. Thermal carrier concentration and barrier height versus temperature plots have been obtained from the C-2-V characteristics, and a value of alpha=-1.40 meV/K for temperature coefficient of the barrier height. The modified activation energy plot according to the barrier inhomogeneity model has given the Richardson constant A* as 80 or 85 A/(cm(2) K-2). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517810]