Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure

Çankaya G., Uçar N., TÜRÜT A.

doi:10.1080/002072100415611

Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure

Çankaya G., Uçar N., TÜRÜT A.

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.87, ss.1171-1176, 2000 (SCI İndekslerine Giren Dergi)

Cilt numarası: 87 Konu: 10
Basım Tarihi: 2000
Doi Numarası: 10.1080/002072100415611
Dergi Adı: INTERNATIONAL JOURNAL OF ELECTRONICS
Sayfa Sayısı: ss.1171-1176

Özet

In Au/n-GaAs Schottky diodes, a remarkable decrease in the depletion layer capacitance was observed by application of hydrostatic pressure. The capacitance decrease induced by the hydrostatic pressure is attributed to the change of ionized additional donor-like defect centres. Since the capacitance decrease is due to hydrostatic pressure, we suggest an application as a pressure-sensitive capacitor.