Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au/n-GaAs metal-semiconductor Schottky contacts


Güllü Ö., Biber M., Van Meirhaeghe R. L. , TÜRÜT A.

THIN SOLID FILMS, vol.516, no.21, pp.7851-7856, 2008 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 516 Issue: 21
  • Publication Date: 2008
  • Doi Number: 10.1016/j.tsf.2008.05.015
  • Title of Journal : THIN SOLID FILMS
  • Page Numbers: pp.7851-7856
  • Keywords: schottky barrier diode, hydrogen pre-annealing, barrier metal thickness, barrier height inhomogeneity, CURRENT-VOLTAGE CHARACTERISTICS, ELECTRON-EMISSION MICROSCOPY, HEIGHT INHOMOGENEITIES, CAPACITANCE-VOLTAGE, INTERFACE STATES, N-TYPE, DIODES, TEMPERATURE, SURFACE, MODEL

Abstract

It is important to investigate the factors that influence the metal-semiconductor interfaces. Some of these factors are the effects of the semiconductor surface and barrier metal. Therefore, in this work we have investigated the influences of hydrogen pre-annealing and barrier metal thickness on the Au/n-GaAs Schottky barrier diodes. Having performed current-voltage and capacitance-voltage measurements, the values of the ideality factor and barrier height for the un-annealed diodes range from 1.14 and 0.855 eV (for 5 nm) to 1.08 and 0.794 eV (for 100 nm), respectively. Also, the same parameters for the H-2 pre-annealed diodes range from 1.78 and 0.920 eV (for 5 nm) to 1.11 and 0.774 eV (for 100 nm), respectively. (c) 2008 Elsevier B.V. All rights reserved.