The Temperature Dependent Capacitance-Voltage Characteristic of Al/YMnO3/p-Si/Al Structure


Coşkun M.

International Natural Science, Engineering and Material Technologies Conference (NEM 2019), İstanbul, Türkiye, 9 - 10 Eylül 2019, ss.56

  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.56

Özet

In this study, YMnO3 powder was synthesized by solid-state reaction method using Y2O3 and Mn2O3 powders as source materials. YMnO3 thin film was grown on the p-Si substrate by using radio frequency (rf) sputter technique and single YMnO3 sputter target. Capacitance-Voltage (C-V) characteristics of Al/YMnO3/p-Si/Al structure were performed in wide temperature range of 40 K-320 K. Temperature dependent barrier height ФCV (T) showed a linear behavior with decreasing temperature. It was obtained a value of 2.24 eV for the barrier height at T= 0K and a temperature coefficient of α=3.30 mV/K from the ФCV versus T plot. Carrier concentration Na showed a slight fluctuation up to 150 K and then increased from 7.25x1015 cm-3 at 150 K to about 9x1015 cm-3 at 300 K with increasing temperature. The depletion layer width, w, always decreased from 0.60 µm around 50 K to around 0.40 µm at 340 K with increasing temperature. The diffusion potential Vp between the Fermi energy level and bottom of conduction band increased as linearly with increasing temperature.