The effect of series resistance on calculation of the interface state density distribution in Schottky diodes


Temirci C., Ayyıldız E., Batı B., TÜRÜT A.

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.88, ss.625-633, 2001 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 88 Konu: 6
  • Basım Tarihi: 2001
  • Doi Numarası: 10.1080/00207210110044396
  • Dergi Adı: INTERNATIONAL JOURNAL OF ELECTRONICS
  • Sayfa Sayısı: ss.625-633

Özet

This work presents an attempt related to the importance of the fact that the series resistance value is considered in calculating the interface state density distribution from the non-ideal forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs). To examine the consistency of this approach, Au/n-Si SBDs with Si bulk thicknesses of 200 and 400 mum have been prepared. Both diodes showed non-ideal I-V behaviour with ideality factors of 1.14 and 1.12, respectively, and thus it has been thought that the diodes have a metal-interface layer-semiconductor configuration. At the same energy position near the bottom of the conduction band, the interface state density (N-SS) values, without taking into account the series resistance value of the devices, are almost one order of magnitude larger than the N-SS values obtained taking into account the series resistance value.