Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer


Gullu O., TÜRÜT A.

ACTA PHYSICA POLONICA A, cilt.128, ss.383-388, 2015 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 128 Konu: 3
  • Basım Tarihi: 2015
  • Doi Numarası: 10.12693/aphyspola.128.383
  • Dergi Adı: ACTA PHYSICA POLONICA A
  • Sayfa Sayısı: ss.383-388

Özet

This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage ( I-V) and capacitance-voltage ( C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2.24 x 10(13) eV(-1) cm(-2) to 5.56 x 10(12) eV(-1) cm(-2).