Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer

Gullu O., TÜRÜT A.

ACTA PHYSICA POLONICA A, vol.128, no.3, pp.383-388, 2015 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 128 Issue: 3
  • Publication Date: 2015
  • Doi Number: 10.12693/aphyspola.128.383
  • Title of Journal : ACTA PHYSICA POLONICA A
  • Page Numbers: pp.383-388


This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage ( I-V) and capacitance-voltage ( C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2.24 x 10(13) eV(-1) cm(-2) to 5.56 x 10(12) eV(-1) cm(-2).