Temperature dependence of interface-state density distributions in Cu/ CuO/n-type Si structures


KARATAŞ Ş., EJDERHA K., BAKKALOĞLU Ö. F. , EFEOĞLU H., Turut A. M.

2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Turkey, 28 - 30 August 2018, vol.46, pp.7030-7032 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 46
  • Doi Number: 10.1016/j.matpr.2021.03.285
  • City: Ardahan
  • Country: Turkey
  • Page Numbers: pp.7030-7032
  • Keywords: Interface state densities, n-Si, I-V, C-V, Temperature, THIN-FILMS

Abstract

The interface state densities of Cu/CuO/n-Si Schottky structure were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements using Roderick and Card's methods in the temperature range 50-310 K. The interface state density (NSS) as a function of energy distribution (EC-ESS) was extracted from the forward-bias I-V measurements by taking into account the bias dependence of the effective barrier height and series resistance. Furthermore, the values of NSS obtained as a function of temperature. The experimental results have shown that the interface state densities (NSS) value of Cu/ CuO/n-Si Schottky structure decreases with increasing EC-ESS values as a function of temperature. Such behavior of interface state densities (NSS) has been explained with variation of the ideality factor as a function of temperature due to lateral inhomogeneities of the barrier height at the metal-semiconductor interface. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.