Spin-memory loss and current-perpendicular-to-plane-magnetoresistance in sputtered multilayers with Au


Kurt H. , Chiang W., Ritz C., Eid K., Pratt W., Bass J.

JOURNAL OF APPLIED PHYSICS, vol.93, no.10, pp.7918-7920, 2003 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 93 Issue: 10
  • Publication Date: 2003
  • Doi Number: 10.1063/1.1540157
  • Title of Journal : JOURNAL OF APPLIED PHYSICS
  • Page Numbers: pp.7918-7920

Abstract

We derive a spin-diffusion length at 4.2 K in sputtered Au, l(sf)(Au)=35(-5)(+65) nm, spin-memory-loss at Au/Cu interfaces, delta(Au/Cu)=0.13(-0.02)(+0.08), and Au/Cu interface specific resistance, 2AR(Au/Cu)=0.35(-0.05)(+0.10) fOmega m(2). We also show that exchange biased spin valves with Au sandwiched between Co layers produce changes in specific resistance, ADeltaR, comparable to those for Cu and Ag. (C) 2003 American Institute of Physics.