Sn/polypyrrole (PPy)/n-Si structure has been fabricated and the I-V characteristics of the structure have been measured in the temperature range 90-300 K. It is shown that the PPy is a good rectifying contact on the n-Si semiconductor. The analysis of I-V characteristics based on the thermionic emission (TE) mechanism has revealed an abnormal decrease of zero-bias barrier height and increase of the ideality factor at lower temperatures. This behavior has been interpreted by the assumption of a Gaussian distribution of barrier heights due to barrier height imhomogeneities that prevail at the interface. (PbO versus 1/T plot has been used for the evidence of Gaussian distribution of the barrier height. The values of (Phi) over bar (b0) = 0.862 eV and sigma(0) = 0.0924 V for the mean barrier height and zero-bias standard deviation have been obtained from the plot. Thus, a modified In(I-0/T-2) - q(2)sigma(0)(2)/2k(2)T(2) versus 1/T plot has given (Phi) over bar (b0) and A* values as 0.824 eV and 19.17 A/cm(2) K-2 concluded that Sn/PPy/n-Si structure has a good rectifying contact and the temperature dependence of I-V characteristics of the Schottky barrier on n-Si successfully have been explained on the basis of TE mechanism with Gaussian distribution of the barrier heights. (c) 2005 Elsevier B.V. All rights reserved.