VERY HIGH 2-DIMENSIONAL HOLE GAS MOBILITIES IN STRAINED SILICON-GERMANIUM


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BAŞARAN E., KUBİAK R., WHALL T., PARKER E.

APPLIED PHYSICS LETTERS, vol.64, no.25, pp.3470-3472, 1994 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 64 Issue: 25
  • Publication Date: 1994
  • Doi Number: 10.1063/1.111244
  • Title of Journal : APPLIED PHYSICS LETTERS
  • Page Numbers: pp.3470-3472

Abstract

We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to less-than-or-equal-to 13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950-degrees-C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V-1 s-1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities.