GERMANIUM CONCENTRATION PROFILING OF SI/GEXSI1-X HETEROSTRUCTURES BY ANODIC-DISSOLUTION


BAŞARAN E., ŞENTÜRK E., TÜMBEK L., MAMMADOV T., ŞENTÜRK E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.6, no.12, pp.1175-1177, 1991 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Letter
  • Volume: 6 Issue: 12
  • Publication Date: 1991
  • Doi Number: 10.1088/0268-1242/6/12/014
  • Title of Journal : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Page Numbers: pp.1175-1177

Abstract

Comparison between the variation in anodic dissolution current during etching of p-type and undoped Si/GexSi1-x (x less-than-or-equal-to 0.24) structures and Ge composition profiles indicates a correlation between the change in etch current and Ge content. The optimal choice of electrolyte and etching conditions is reported. These preliminary results indicate that the Ge content can be determined from the etch current profile with an accuracy of +/- 15% in x at a depth resolution of 10 nm. This technique represents a simple, rapid method of Ge profiling through arbitray-composition structures.