GERMANIUM CONCENTRATION PROFILING OF SI/GEXSI1-X HETEROSTRUCTURES BY ANODIC-DISSOLUTION


BAŞARAN E., ŞENTÜRK E., TÜMBEK L., MAMMADOV T., ŞENTÜRK E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.6, ss.1175-1177, 1991 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 6 Konu: 12
  • Basım Tarihi: 1991
  • Doi Numarası: 10.1088/0268-1242/6/12/014
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Sayfa Sayısı: ss.1175-1177

Özet

Comparison between the variation in anodic dissolution current during etching of p-type and undoped Si/GexSi1-x (x less-than-or-equal-to 0.24) structures and Ge composition profiles indicates a correlation between the change in etch current and Ge content. The optimal choice of electrolyte and etching conditions is reported. These preliminary results indicate that the Ge content can be determined from the etch current profile with an accuracy of +/- 15% in x at a depth resolution of 10 nm. This technique represents a simple, rapid method of Ge profiling through arbitray-composition structures.