Photovoltaic and electronic properties of quercetin/p-InP solar cells


Güllü Ö., TÜRÜT A.

SOLAR ENERGY MATERIALS AND SOLAR CELLS, cilt.92, ss.1205-1210, 2008 (SCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 92 Konu: 10
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.solmat.2008.04.009
  • Dergi Adı: SOLAR ENERGY MATERIALS AND SOLAR CELLS
  • Sayfa Sayıları: ss.1205-1210

Özet

In this work, quercetin/p-InP heterojunction solar cell has been fabricated via solution-processing method and characterized by current-voltage and capacitance-voltage measurements at room temperature. A barrier height and an ideality factor value of 0.86eV and 3.20 for this structure in dark have been obtained from the forward bias current-voltage characteristics. From the capacitance-voltage measurement, the barrier height and free carrier concentration values for the quercetin/pInP device have been calculated as 1.63 eV and 3.8 x 10(17) cm(-3). respectively. Also, series resistance calculation has been performed by using Cheung theory. The device exhibits a strong photovoltaic behavior with a maximum open circuit voltage V-oc of 0.36 V and short-circuit current I-sc of 35.3 nA under 120 lx light intensity only. (C) 2008 Elsevier B.V. All rights reserved.