The impact of Ir doping on the electrical properties of YbFe1−xIr xO3 perovskite-oxide compounds

Coskun M. , Polat O., Coskun F., Kurt B. Z. , Durmus Z., Caglar M., et al.

Journal of Materials Science: Materials in Electronics, 2019 (SCI İndekslerine Giren Dergi)

  • Cilt numarası:
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1007/s10854-019-02691-1
  • Dergi Adı: Journal of Materials Science: Materials in Electronics


In this study, YbFe1−xIrxO3 (x=0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1–107  Hz) and temperature (between −100 and 100 °C with 20 °C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped.