The impact of Ir doping on the electrical properties of YbFe1-xIrxO3 perovskite-oxide compounds


Coskun M. , Polat O., Coskun F. M. , Kurt B. Z. , Durmus Z., Caglar M., ...More

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.31, no.2, pp.1731-1744, 2020 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 31 Issue: 2
  • Publication Date: 2020
  • Doi Number: 10.1007/s10854-019-02691-1
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Page Numbers: pp.1731-1744

Abstract

In this study, YbFe1-xIrxO3 (x = 0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1-10(7) Hz) and temperature (between - 100 and 100 degrees C with 20 degrees C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped.