MICROELECTRONIC ENGINEERING, cilt.85, ss.2250-2255, 2008 (SCI İndekslerine Giren Dergi)
Electrical measurements have been reported sandwich device fabricated from DNA molecular film located between Al and p-type InP inorganic semiconductor. We have observed that DNA-based this structure shows an excellent rectifying behavior, and that the DNA film increases the effective barrier height by influencing the space charge region of InP. We have also evaluated electrical characteristics of the DNA-based device in a wide temperature range. (C) 2008 Elsevier B.V. All rights reserved.