SOLID-STATE ELECTRONICS, cilt.43, ss.521-527, 1999 (SCI İndekslerine Giren Dergi)
Ni/-, Ti/- and NiTi alloy/n-GaAs Schottky barrier diodes (SBDs) have been fabricated and annealed for 5 min in the temperature range of 100-650 degrees C with steps of 50 or 100 degrees C. The value of Phi(b) and n for as-deposited Ni/-, Ti/- and NiTi alloy/n-GaAs SBDs has been determined to be 0.73, 0.64 and 0.68 eV and 1.02, 1.08 and 1.10, respectively. For the NiTi alloy/n-GaAs diode, while the ideality factor remains unchanged up to 400 degrees C annealing, it decreased to 1.02 at 500 degrees C. An additional barrier height enhancement with increased annealing temperature occurs while the ideality factor remains close to unity. Thermal stability of the NiTi alloy/n-GaAs diode is maintained up to an annealing temperature of 500 degrees C. It has been concluded that the NiTi alloy/n-GaAs SBD contact has a better performance than the Ni/- and Ti/n-type. (C) 1999 Elsevier Science Ltd. All rights reserved.