Temperature dependence of Schottky diode characteristics prepared with photolithography technique


Korucu D., TÜRÜT A.

INTERNATIONAL JOURNAL OF ELECTRONICS, vol.101, no.11, pp.1595-1606, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 101 Issue: 11
  • Publication Date: 2014
  • Doi Number: 10.1080/00207217.2014.888774
  • Title of Journal : INTERNATIONAL JOURNAL OF ELECTRONICS
  • Page Numbers: pp.1595-1606
  • Keywords: GaAs semiconductors, barrier inhomogeneity, barrier height, Schottky barrier diodes, metal-semiconductor contacts, I-V CHARACTERISTICS, BARRIER HEIGHT INHOMOGENEITIES, CURRENT-VOLTAGE, ELECTRICAL CHARACTERIZATION, ELECTRONIC-PROPERTIES, CAPACITANCE-VOLTAGE, CONTACTS, TRANSPORT, FABRICATION, PARAMETERS

Abstract

A Richardson constant (RC) of 8.92 Acm−2K−2 from the conventional Richardson plot
has been obtained because the current–voltage data of the device quite well obey the
thermionic emission (TE) model in 190–320 K range. The experimental nT versus T
plot of the device has given a value of T0 = 7.40 K in temperature range of 160–320 K.
The deviations from the TE current mechanism at temperatures below 190 K have
been ascribed to the patches introduced by lateral inhomogeneity of the barrier heights.
Therefore, an experimental RC value of 7.49 A(cmK)−2 has been obtained by considering
Tung’s patch model in the temperature range of 80–190 K. This value is in
very close agreement with the known value of 8.16 Acm−2K−2 for n-type GaAs.
A Richardson constant (RC) of 8.92 Acm(-2)K(-2) from the conventional Richardson plot has been obtained because the current-voltage data of the device quite well obey the thermionic emission (TE) model in 190-320 K range. The experimental nT versus T plot of the device has given a value of T-0 = 7.40 K in temperature range of 160-320 K. The deviations from the TE current mechanism at temperatures below 190 K have been ascribed to the patches introduced by lateral inhomogeneity of the barrier heights. Therefore, an experimental RC value of 7.49 A(cmK)(-2) has been obtained by considering Tung's patch model in the temperature range of 80-190 K. This value is in very close agreement with the known value of 8.16 Acm(-2)K(-2) for n-type GaAs.