Temperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodes


Asubay S., Güllü Ö., Abay B., TÜRÜT A. , Yılmaz A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.23, 2008 (SCI İndekslerine Giren Dergi)

Özet

The current-voltage ( I-V) characteristics of Ti/p-InP Schottky diodes have been measured in a wide temperature range with a temperature step of 20 K. An experimental barrier height ( BH) Phi(ap) value of about 0.85 eV was obtained for the Ti/p-InP Schottky diode at 300 K. A decrease in the experimental BH Phi(ap) and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of a thermionic emission mechanism with the Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal semiconductor interface. (Phi) over bar (b) and A* as 1.01 eV, and 138 A cm(-2) K-2, respectively, have been calculated from a modified ln( I-0/T-2) - q(2)sigma(2)(s)/2k(2)T(2) versus 1/T plot. This BH value is in close agreement with the values of 0.99 eV obtained from the Phi(ap) versus 1/T and ln( I-0/T-2) versus 1/nT plots.