Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode

Karatas S., Yildirim N., TÜRÜT A.

SUPERLATTICES AND MICROSTRUCTURES, cilt.64, ss.483-494, 2013 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 64
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.spmi.2013.10.015
  • Sayfa Sayısı: ss.483-494


In this study, the electrical characteristics of the Cr/n-type Si (MS) Schottky barrier diode have been investigated by the current-voltage (I-V) and capacitance-voltage (C-V) measurements at 300 K temperature. Using the thermionic emission theory, the values of ideality factor and the barrier height have been obtained to be 1.22, 0.71 and 1.01, 0.83 eV, from the results of the I-V and C-V measurements, respectively. The barrier height (Phi(b)) and the series resistance (R-S) obtained from Norde's function have been compared with those obtained from Cheung functions, and a good agreement between the results of both methods was seen. The interface state density (N-SS) calculated without the R-S is obtained to be increasing exponentially with bias from 2.40 x 10(12) cm(-2) eV(-1) in (E-C-0.623) eV to 1.94 x 10(14) cm(-2) eV(-1) in (E-C-0.495) eV, also, the N-SS obtained taking into account the R-S has increased exponentially with bias from 2.07 x 10(12) cm(-2) eV(-1) to 1.47 x 10(14) cm(-2) eV(-1) in the same interval. (C) 2013 Elsevier Ltd. All rights reserved.