Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode


Karatas S., Yildirim N., TÜRÜT A.

SUPERLATTICES AND MICROSTRUCTURES, cilt.64, ss.483-494, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 64
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.spmi.2013.10.015
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Sayfa Sayıları: ss.483-494

Özet

In this study, the electrical characteristics of the Cr/n-type Si (MS) Schottky barrier diode have been investigated by the current-voltage (I-V) and capacitance-voltage (C-V) measurements at 300 K temperature. Using the thermionic emission theory, the values of ideality factor and the barrier height have been obtained to be 1.22, 0.71 and 1.01, 0.83 eV, from the results of the I-V and C-V measurements, respectively. The barrier height (Phi(b)) and the series resistance (R-S) obtained from Norde's function have been compared with those obtained from Cheung functions, and a good agreement between the results of both methods was seen. The interface state density (N-SS) calculated without the R-S is obtained to be increasing exponentially with bias from 2.40 x 10(12) cm(-2) eV(-1) in (E-C-0.623) eV to 1.94 x 10(14) cm(-2) eV(-1) in (E-C-0.495) eV, also, the N-SS obtained taking into account the R-S has increased exponentially with bias from 2.07 x 10(12) cm(-2) eV(-1) to 1.47 x 10(14) cm(-2) eV(-1) in the same interval. (C) 2013 Elsevier Ltd. All rights reserved.

In this study, the electrical characteristics of the Cr/n-type Si (MS) Schottky barrier diode have been investigated by the current–voltage (IV) and capacitance–voltage (CV) measurements at 300 K temperature. Using the thermionic emission theory, the values of ideality factor and the barrier height have been obtained to be 1.22, 0.71 and 1.01, 0.83 eV, from the results of the  IV and CV measurements, respectively. The barrier height (Ub) and the series resistance (RS) obtained from Norde’s function have been compared with those obtained from Cheung functions, and a good agreement between the results of both methods was seen. The interface state density (NSS) calculated without the RS is obtained to be increasing exponentially with bias from 2.40 1012 cm2 -eV 1 in (EC0.623) eV to 1.94 1014 cm2 eV1 in (EC0.495) eV, also, the NSS obtained taking into account the RS has increasedexponentially with bias from 2.07 012 cm2 eV1 to 1.47 1014 cm2 eV1 in the same interval.