Fabrication and electrical characteristics of Schottky diode based on organic material

Güllü Ö., Aydoğan Ş., TÜRÜT A.

MICROELECTRONIC ENGINEERING, vol.85, no.7, pp.1647-1651, 2008 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 85 Issue: 7
  • Publication Date: 2008
  • Doi Number: 10.1016/j.mee.2008.04.003
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.1647-1651
  • Keywords: Schottky diode, barrier height, ideality factor, series resistance, orange G, CURRENT-VOLTAGE, ENERGY-DISTRIBUTION, PARAMETERS, GAAS


The current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of Al/Orange G/n-Si/AuSb structure were investigated at room temperature. A modified Norde's function combined with conventional forward I-V method was used to extract the parameters including barrier height (BH) and the series resistance. The barrier height and series resistance obtained from Norde's function was compared with those from Cheung functions, and it was seen that there was a good agreement between series resistances from both methods., The C-V characteristics were performed at 10 kHz and 500 kHz frequencies, and C-f characteristics were performed 0.0 V, +0.4 V and -0.4 V. (c) 2008 Elsevier B.V. All rights reserved.