I-V-T (current-voltage-temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device


Çaldıran Z., Deniz A. R. , COŞKUN F. M. , Aydoğan Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.584, ss.652-657, 2014 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 584
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.jallcom.2013.09.006
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Sayfa Sayısı: ss.652-657

Özet

The current-voltage measurements of the Au/Anthraquinone/p-Si/Al junction device have been carried out in the temperature range of 80-280 K. It has been observed that the anthraquinone film increases the effective barrier height of the Au/p-Si/Al by influencing the space charge region of p-Si from 0.77 eV to 0.85 eV at 280 K. The current-voltage measurements of the Au/Anthraquinone/p-Si/Al junction device show a decrease of the barrier height and an increase in the ideality factor at low temperatures. The dependence of the ideality factor and barrier height on temperature has been attributed the spatial inhomogeneity in the interface. The non-linearity behavior has been seen in the Richardson plots and the values of activation energy (E-a) and the Richardson constant (A*) has been determined as 0.08 eV and 3.19 x 10 (8) A cm (2) K (2) from the slope and the intercept at ordinate of the linear region of Richardson plot, respectively. The values of the series resistance obtained from Cheung functions are strongly temperature-dependent. (C) 2013 Elsevier B. V. All rights reserved.