The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I-V characteristic of the device shows a good rectification. The ideality factor and the barrier height from the I-V characteristics have been determined as 3.14 and 0.80 eV, respectively. A modified Norde's function combined with the conventional I-V method has been used to extract the parameters including the barrier height and the series resistance. The barrier height and the series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there was a good agreement between those from both method. It has also been seen that the values of diode capacitance increased up to the constant values for the forward bias. (C) 2009 Elsevier B.V. All rights reserved.