ELEMENTAL BORON AND ANTIMONY DOPING OF MBE SI AND SIGE STRUCTURES GROWN AT TEMPERATURES BELOW 600-DEGREES-C


BAŞARAN E., ORAL A., MAMMADOV T., SEYİDOV M., ŞENTÜRK E., MAMMADOV T., et al.

JOURNAL OF CRYSTAL GROWTH, cilt.111, ss.907-911, 1991 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 111
  • Basım Tarihi: 1991
  • Doi Numarası: 10.1016/0022-0248(91)91105-j
  • Dergi Adı: JOURNAL OF CRYSTAL GROWTH
  • Sayfa Sayısı: ss.907-911

Özet

This paper considers the low temperature doping of (100) Si and SiGe structures with elemental B and Sb sources particularly with regard to obtaining very narrow delta doping spikes. B is found to be an excellent dopant at SiGe growth temperatures incorporating in an active state at concentrations up to 10%. B delta layers of 1 nm or less have also been grown. Sb is also shown to be capable of providing delta doped layers less than 2 nm wide. The B delta layers have been incorporated into modulation doped structures yielding an order of magnitude increase in mobility at 77 K.