Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

Cimilli F., Sağlam M., Efeoğlu H., TÜRÜT A.

PHYSICA B-CONDENSED MATTER, cilt.404, ss.1558-1562, 2009 (SCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 404
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.physb.2009.01.018
  • Sayfa Sayıları: ss.1558-1562


The current-voltage (I-V) characteristics of Au/n-InP Schottky contacts have been measured in the temperature range of 70-300K by steps of 10K. Our data of the Au/n-InP Schottky contact strongly suggest that the temperature-dependent electron transport at the metal-semiconductor interface is significantly affected by the barrier inhomogeneity. The distribution of local effective SBHs has been modeled by a summation of existence of double Gaussian barrier heights which represents the high- and low-barrier of the full distribution in 170-300 and 70-170 K ranges. (C) 2009 Elsevier B.V. All rights reserved.