An investigation of metallic polypyrrole polymer (MPP)/n-InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved n-type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the n-InSe(:Er) semiconductor. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode have been determined at room temperature. The diode shows nonideal I-V behavior with an ideality factor greater than one. In addition, the I-V characteristics of the (MPP)/n-InSe(:Er) device shows an improvement with an increased Phi(b0) and a decreased ideality factor after the polymer melt processing step. The reverse bias C-2 -Vcharacteristics of the diode shows a non-linear behavior. (C) 2000 Elsevier Science B.V. All rights reserved.