Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Güllü Ö., TÜRÜT A.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.509, no.3, pp.571-577, 2011 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 509 Issue: 3
  • Publication Date: 2011
  • Doi Number: 10.1016/j.jallcom.2010.09.146
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.571-577


The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DINIA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 +/- 0.02 and 1.70 +/- 0.02 at 300K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height Phi(b) determined from the I-V measurements was 0.75 +/- 0.01 eV at 300 K and decreases to 0.61 +/- 0.01 eV at 200 K. The forward voltage-temperature (V-F-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I-F) in the range 20 nA-6 mu A. The V-F-T characteristics were linear for three activation currents in the diode. From the V-F-T characteristics at 20 nA, 100 nA and 6 p,A, the values of the temperature coefficients of the forward bias voltage (dV(F)/dT) for the diode were determined as -2.30 mV K-1, -2.60 mV K-1 and -3.26 mV K-1 with a standard error of 0.05 mV K-1, respectively. (C) 2010 Elsevier B.V. All rights reserved.