Research Information System
International Natural Science, Engineering and Material Technologies Conference, İstanbul, Turkey, 9 - 10 September 2019, pp.393-402
Al/YMn0.95Os0.05O3/p-Si/Al devices were fabricated within the scope of this study. The 5% Os doped YMnO3
thin layers were coated on a p-Si substrate by RF sputtering technique under 2 mTorr pressure, 100 W power
and with a substrate temperature of 500 C. In this report, the capacitance to voltage (C-V) characteristics of
those devices with varying temperature between 40 and 320 K were presented. According to this data, C-2 vs
V characteristics plotted and the barrier heights were calculated from the intercepts of the C-2 vs V plot with
V axis for each temperature. The temperature dependent barrier height ФCV (T) behavior was almost linear and
decreased with increasing temperature. The barrier height value at 0 K was obtained as 1.85 eV. The graph of
the carrier concentration Na showed a little fluctuation; it reached a peak with a value of 9x1015 cm-3 at 75 K,
and decreased linearly till 150 K, which is about 8x1015 cm-3
, then showed almost a constant value of this
concentration up to 300 K and finally made a rigid peak at 350 K with a concentration of 8.8x1015 cm-3
.