TEMPERATURE DEPENDENT CAPACITANCE AND OTHER ELECTRICAL PROPERTIES OF THE DEVICES WITH A STRUCTURE OF Al/YMn0.95Os0.05O3/p-Si/Al


Coşkun F. M.

International Natural Science, Engineering and Material Technologies Conference, İstanbul, Türkiye, 9 - 10 Eylül 2019, ss.393-402

  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayısı: ss.393-402

Özet

Al/YMn0.95Os0.05O3/p-Si/Al devices were fabricated within the scope of this study. The 5% Os doped YMnO3 thin layers were coated on a p-Si substrate by RF sputtering technique under 2 mTorr pressure, 100 W power and with a substrate temperature of 500 C. In this report, the capacitance to voltage (C-V) characteristics of those devices with varying temperature between 40 and 320 K were presented. According to this data, C-2 vs V characteristics plotted and the barrier heights were calculated from the intercepts of the C-2 vs V plot with V axis for each temperature. The temperature dependent barrier height ФCV (T) behavior was almost linear and decreased with increasing temperature. The barrier height value at 0 K was obtained as 1.85 eV. The graph of the carrier concentration Na showed a little fluctuation; it reached a peak with a value of 9x1015 cm-3 at 75 K, and decreased linearly till 150 K, which is about 8x1015 cm-3 , then showed almost a constant value of this concentration up to 300 K and finally made a rigid peak at 350 K with a concentration of 8.8x1015 cm-3 .