Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance


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Feng J., Chen J., KURT H. , Coey J. M. D.

JOURNAL OF APPLIED PHYSICS, cilt.112, 2012 (SCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 112 Konu: 12
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1063/1.4769805
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS

Özet

Low frequency 1/f barrier noise has been investigated in sputtered MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance ratio of up to 330% at room temperature. The lowest normalized noise parameter alpha of the tunnel barrier reaches 2.5 x 10(-12) - 2.1 x 10(-11) mu m(2), which is comparable to that found in MTJs with the MgO barrier grown by MBE or electron-beam evaporation. This normalized barrier noise is almost bias independent in the voltage range of up to +/- 1.2V. The low noise level and high voltage stability may reflect the high quality of the sputtered MgO with a uniform distribution of defects in the MgO layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769805]