DNA-based organic-on-inorganic semiconductor Schottky structures

Güllü Ö., Çankaya M., Barış Ö., Biber M., Özdemir H., Güllüce M., ...More

APPLIED SURFACE SCIENCE, vol.254, no.16, pp.5175-5180, 2008 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 254 Issue: 16
  • Publication Date: 2008
  • Doi Number: 10.1016/j.apsusc.2008.02.019
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.5175-5180
  • Keywords: Schottky barrier, organic-inorganic contact, DNA, organic semiconductor, BARRIER HEIGHT, ELECTRICAL-TRANSPORT, CURRENT-VOLTAGE, CONTACTS, SI, INHOMOGENEITIES, SURFACES, DIODES, SERIES, CHARGE


A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 x 10(10) Omega cm representing a p-type conductivity. (C) 2008 Elsevier B.V. All rights reserved.