DNA-based organic-on-inorganic semiconductor Schottky structures


Güllü Ö., Çankaya M., Barış Ö., Biber M., Özdemir H., Güllüce M., et al.

APPLIED SURFACE SCIENCE, cilt.254, ss.5175-5180, 2008 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 254 Konu: 16
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.apsusc.2008.02.019
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Sayfa Sayısı: ss.5175-5180

Özet

A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 x 10(10) Omega cm representing a p-type conductivity. (C) 2008 Elsevier B.V. All rights reserved.