The YMn0.90Os0.10O3 (YMOO) thin film was deposited on the SiO2/p-Si substrate via using radio frequency (rf) magnetron sputter method. Voltage dependent electrical properties of the Al/YMOO/SiO2/p-Si/Al structure were investigated at various frequency and ambient condition. Capacitance-voltage (C-V) measurements showed that the capacitance has an accumulation region at positive or forward bias region. Conductance-voltage (G-V) characteristics of the device displayed that the G increases with increasing frequency. Series resistance, R-s, of the device was derived from C-V and G-V measurements and the R-s-V characteristic exhibited strongly frequency dependency. Frequency dependent interface state density, N-ss, was calculated according to the Hill-Coleman relation, which decreases as frequency increases. The corrected capacitance (C-c) and conductance (G(c)) results revealed that the effect of series resistance on the electrical properties cannot be ignored.