Effect of 6 MeV electron irradiation on electrical characteristics of the Au/n-Si/Al Schottky diode

Uğurel E., Aydoğan Ş., Şerifoğlu K., TÜRÜT A.

MICROELECTRONIC ENGINEERING, vol.85, no.11, pp.2299-2303, 2008 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 85 Issue: 11
  • Publication Date: 2008
  • Doi Number: 10.1016/j.mee.2008.08.002
  • Page Numbers: pp.2299-2303
  • Keywords: Electron irradiation, Schottky contact, Schottky barrier, Series resistance, N-TYPE SILICON, HIGH-ENERGY, CONTACTS, IMPLANTATION, FLUENCE


Electron irradiation of the Au/n-Si/Al Schottky diode was performed by using 6 MeV electrons and 3 x 10(12) e-/cm(2) fluency. The current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the unirradiated and irradiated Schottky diode were analyzed. It was seen that the values of the barrier height, the series resistance, and the ideality factor increased after electron irradiation. However. there was a decrease in the leakage current with electron irradiation. The increase in the barrier height and in the series resistance values was attributed to the dopant deactivation in the near-interface region. The interface states, N(ss), have been decreased significantly after electron irradiation. This was attributed to the decrease in recombination centre and the existence of an interfacial layer. A decrease in the capacitance was observed after electron irradiation. This was attributed to decrease in the net ionized dopant concentration with electron irradiation. (C) 2008 Elsevier B.V. All Fights reserved