JOURNAL OF APPLIED PHYSICS, cilt.91, ss.245-250, 2002 (SCI İndekslerine Giren Dergi)
The current-voltage (I-V) characteristics of CrNiCo alloy Schottky contacts on a molecular-beam epitaxy n-GaAs substrate have been measured over the temperature range of 130-330 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the interface. It is shown that the occurrence of Gaussian distribution of then barrier heights is responsible for the decrease of the apparent barrier height Phi (b0), increase of the ideality factor n and nonlinearity in the activation energy plot at low temperatures. A Phi (b0) vs 1/T plot was drawn to obtain evidence of a Gaussian distribution of the barrier heights, and values of <(