Electron irradiation effects on the organic-on-inorganic silicon Schottky structure


Güllü Ö., Aydoğan Ş., Şerifoğlu K., TÜRÜT A.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol.593, no.3, pp.544-549, 2008 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 593 Issue: 3
  • Publication Date: 2008
  • Doi Number: 10.1016/j.nima.2008.05.043
  • Title of Journal : NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • Page Numbers: pp.544-549

Abstract

In this study. the effects of high-energy electron irradiation on the electrical characteristics of a Rhodamine-101(Rh101)/p-Si Schottky structure were investigated. Some contact parameters such as barrier height, ideality factor and series resistance were calculated from the current-voltage (I-V) characteristics. It was seen that these three parameters were increased by the electron irradiation. After the electron irradiation, it was also seen that the carrier concentration, the reverse bias current and the capacitance of the device decreased. (C) 2008 Elsevier B.V. All rights reserved.