Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performed
in this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of the
devices were performed with forward and reverse biases. According to this measurements, the C-2 –V plots were conducted.
With the help of those calculation, the barrier height vs temperature (ΦCV – T), the carrier concentration vs temperature (NA –
T) and the depletion width vs temperature (w – T) graphs were plotted. In conclusion, it has been seen that the ΦCV and w
decreased, and NA almost remained constant with increasing temperature.