A COMPREHENSIVE DETERMINING OF CAPACITANCE -VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION


Coşkun F. M.

Eskişehir Technical University Journal of Science and Technology B- Theoretical Sciences, vol.8, no.2, pp.247-256, 2020 (National Refreed University Journal)

  • Publication Type: Article / Article
  • Volume: 8 Issue: 2
  • Publication Date: 2020
  • Doi Number: 10.20290/estubtdb.633238
  • Title of Journal : Eskişehir Technical University Journal of Science and Technology B- Theoretical Sciences
  • Page Numbers: pp.247-256

Abstract

Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performed in this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of the devices were performed with forward and reverse biases. According to this measurements, the C-2 –V plots were conducted. With the help of those calculation, the barrier height vs temperature (ΦCV – T), the carrier concentration vs temperature (NA – T) and the depletion width vs temperature (w – T) graphs were plotted. In conclusion, it has been seen that the ΦCV and w decreased, and NA almost remained constant with increasing temperature.