A COMPREHENSIVE DETERMINING OF CAPACITANCE -VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION


Coşkun F. M.

Eskişehir Technical University Journal of Science and Technology B- Theoretical Sciences, cilt.8, ss.247-256, 2020 (Hakemli Üniversite Dergisi)

  • Cilt numarası: 8 Konu: 2
  • Basım Tarihi: 2020
  • Doi Numarası: 10.20290/estubtdb.633238
  • Dergi Adı: Eskişehir Technical University Journal of Science and Technology B- Theoretical Sciences
  • Sayfa Sayıları: ss.247-256

Özet

Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performed in this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of the devices were performed with forward and reverse biases. According to this measurements, the C-2 –V plots were conducted. With the help of those calculation, the barrier height vs temperature (ΦCV – T), the carrier concentration vs temperature (NA – T) and the depletion width vs temperature (w – T) graphs were plotted. In conclusion, it has been seen that the ΦCV and w decreased, and NA almost remained constant with increasing temperature.