A comparative study for profiling ultrathin boron layers in Si


BAŞARAN E., ADDEMİR O., ASLAN M., PARKER E.

CRYSTAL RESEARCH AND TECHNOLOGY, cilt.38, ss.1037-1041, 2003 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 38 Konu: 12
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1002/crat.200310132
  • Dergi Adı: CRYSTAL RESEARCH AND TECHNOLOGY
  • Sayfa Sayısı: ss.1037-1041

Özet

The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance-voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a delta layer, however ECV match better with the results of SIMS than that of SR. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.