The temperature dependence of current-voltage characteristics of the Au/Polypyrrole/p-Si/Al heterojunctions


Aydoğan Ş., Sağlam M., TÜRÜT A.

JOURNAL OF PHYSICS-CONDENSED MATTER, cilt.18, ss.2665-2676, 2006 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 18 Konu: 9
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1088/0953-8984/18/9/006
  • Dergi Adı: JOURNAL OF PHYSICS-CONDENSED MATTER
  • Sayfa Sayısı: ss.2665-2676

Özet

The current-voltage (I-V) characteristics of Au/Polypyrrole/p-Si/Al contacts have been measured at temperatures ranging from 70 to 280 K. The I-V characteristics of the device have rectifying behaviour with a potential formed at the interface. The high values of the ideality factor n depending on the sample temperature may be ascribed to a decrease of the exponentially increasing rate in current due to space-charge injection into the PPy thin film at higher forward bias voltage. The experimental reverse bias I-V characteristics of the device followed the Schottky-like conduction model or Poole-Frenkel effect formulae. A linear temperature dependence of the barrier height Phi(b) from the reverse bias I-V characteristics was observed, and the Phi(bo) value decreased with lowering temperature, ranging from 0.69 eV at 280 K to 0.22 eV at 70 K.