Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon


BAŞARAN E., PARRY C., KUBİAK R., WHALL T., PARKER E.

JOURNAL OF CRYSTAL GROWTH, vol.157, pp.109-112, 1995 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 157
  • Publication Date: 1995
  • Doi Number: 10.1016/0022-0248(95)00397-5
  • Journal Name: JOURNAL OF CRYSTAL GROWTH
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.109-112

Abstract

The electrochemical capacitance-voltage profiling (eCV) technique is employed to measure the carrier concentration in heavily boron-doped Si, grown by molecular beam epitaxy. Secondary ion mass spectrometry (SIMS) and Hall measurements are also carried out for comparison. The carrier concentrations obtained by eCV match well with the Hall measurements. The results indicate that the eCV technique is capable of probing carrier concentrations well into the 10(20) cm(-3) range with a good precision. The relative merits of the eCV and SIMS depth profiling are shown to be useful in the cm analysis of boron incorporation behaviour at doping levels above solubility limits.