n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties


Güllü Ö., TÜRÜT A.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol.28, no.3, pp.466-472, 2010 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 28 Issue: 3
  • Publication Date: 2010
  • Doi Number: 10.1116/1.3377141
  • Title of Journal : JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
  • Page Numbers: pp.466-472

Abstract

The rectifying junction characteristics of methyl red (MR) organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film increases the effective barrier height by influencing the space charge region of the n-type InP. The barrier height and ideality factor values for this structure have been obtained as 0.75 eV and 1.93 from the forward bias current-voltage characteristics, respectively. By using capacitance-voltage characteristics at 1 MHz, the barrier height and the carrier concentration values have been calculated as 0.93 eV and 5.13x10(15) cm(-3), respectively. The energy distributions of the interface states and their relaxation times have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics. Moreover, it was seen that both the interface-state density and the relaxation time of the interface states decreased with bias voltage from experimental results. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3377141]