TÜRÜT A., Köleli F.

PHYSICA B, vol.192, no.3, pp.279-283, 1993 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 192 Issue: 3
  • Publication Date: 1993
  • Doi Number: 10.1016/0921-4526(93)90032-2
  • Journal Name: PHYSICA B
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.279-283


An examination of the rectification properties of organic conductor/inorganic semiconductor/metal Schottky diodes has been made, in which freshly prepared polythiophene has been used as metal, and n-Si and n-GaAs as semiconductors. Polythiophene films were electrochemically obtained on glass substrates covered with Au in acetonitrile/0.25 M LiClO4 solution. The metallic polythiophene polymer has provided a good rectifying contact to the n-Si and n-GaAs semiconductors. The processing and I-V and C-V measurements of the devices were done at room temperature in laboratory atmosphere. The forward I-V characteristics of the metallic polythiophene/n-Si and the metallic polythiophene/n-GaAs Schottky diodes have exhibited ideality factors of 2.40 and 2.69, respectively. However, values obtained for the barrier height of these Schottky diodes could be sufficient for many device applications. In addition, the work function of the polythiophene was determined as 4.81 eV.