Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer


Güllü Ö., Aydoğan Ş., TÜRÜT A.

THIN SOLID FILMS, vol.520, no.6, pp.1944-1948, 2012 (Journal Indexed in SCI) identifier

  • Publication Type: Article / Article
  • Volume: 520 Issue: 6
  • Publication Date: 2012
  • Doi Number: 10.1016/j.tsf.2011.09.043
  • Title of Journal : THIN SOLID FILMS
  • Page Numbers: pp.1944-1948
  • Keywords: Devices, Schottky barriers, Organics, Surfaces and interfaces, HEIGHT ENHANCEMENT, ELECTRICAL-PROPERTIES, SI/AL STRUCTURE, INP, CONTACTS, STABILITY, TRANSPORT, JUNCTION

Abstract

In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 mu A and 240 mV, respectively. (C) 2011 Elsevier B.V. All rights reserved.