Preparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application


YILMAZ M., Caldiran Z., Deniz A. R. , AYDOĞAN Ş., Gunturkun R., Turut A.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.119, no.2, pp.547-552, 2015 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 119 Issue: 2
  • Publication Date: 2015
  • Doi Number: 10.1007/s00339-015-8987-5
  • Journal Name: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.547-552

Abstract

n-ZnO film has been formed on p-Si substrate using sol-gel spin-coating technique. For structural, optical and morphological characterization, the XRD pattern, SEM images and EDX spectra of the n-ZnO film have been obtained. The optical band gap of n-ZnO has been calculated as 3.29 eV. A Schottky diode application of the film has been performed by evaporation of Au on n-ZnO film. It has been seen that the device has exhibited good rectifying behavior. The current-voltage (I-V) and capacitance-voltage (C-V) measurement of the device has been taken as a function of the frequency, at room temperature. Using I-V curve, the ideality factor and barrier height (I broken vertical bar (b)) of n-ZnO have been calculated as 1.93 and 0.80 eV, respectively. (I broken vertical bar (b)) (C-V) has been found 0.86 eV, at 500 kHz frequency.